Kioxia Develops Core Technology that Will Allow the Practical Implementation of High-density, Low-power 3D DRAM
TOKYO -- Kioxia Corporation, a world leader in memory solutions, today announced the development of highly stackable oxide-semiconductor channel transistors that will enable the practical implementation of high-density, low-power 3D DRAM. This technology was presented at the IEEE International Electron Devices Meeting (IEDM) held in San Francisco, USA, on December 10, and has the potential to reduce power consumption across a wide range of applications, including AI servers and IoT components. Read More
Recent Posts

Romanian Inflation Ends Tumultuous Year in Politics Close to 10%

UK Boosts Support For Offshore Wind in Bumper Auction

Ireland Is Trying to Get Back on the Data Center Bandwagon

Notice Concerning Change of Representative Executive Officer

Polish Recycler Bets Millions on Europe’s Critical Metals Push

Blistering Metals Rally Sends Silver, Tin and Copper to Records

Wellington Management Appoints Alex Behm to Strengthen Secondaries Capabilities

TCS and AMD Announce Strategic Collaboration to Drive AI Adoption at Scale

New data reinforces Ipsen’s commitment to bringing solutions and addressing care gaps in neurological diseases at TOXINS

TOXINS 2026: Clinical Updates on Galderma’s Leading Neuromodulator Portfolio Further Reinforce Its Leadership in Injectable Aesthetics


